Black phosphorus field-effect transistors
نویسندگان
چکیده
منابع مشابه
Black phosphorus field-effect transistors.
Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor pe...
متن کاملPolarized photocurrent response in black phosphorus field-effect transistors.
We investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements. Our results reveal that the photoc...
متن کاملThe Role of Air Adsorption in Inverted Ultrathin Black Phosphorus Field-Effect Transistors
Few-layer black phosphorus (BP) attracts much attention owing to its high mobility and thickness-tunable band gap; however, compared with the commonly studied transition metal dichalcogenides (TMDCs), BP has the unfavorable property of degrading in ambient conditions. Here, we propose an inverted dual gates structure of ultrathin BP FET to research the air adsorption on BP. In fabrication proce...
متن کاملHighly-stable black phosphorus field-effect transistors with low density of oxide traps
Black phosphorus is considered a very promising semiconductor for two-dimensional field-effect transistors. Initially, the main disadvantage of this material was thought to be its poor air stability. However, recent studies have shown that this problem can be solved by suitable encapsulation. As such, long-term studies of the outstanding properties of black phosphorus devices have become possib...
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ژورنال
عنوان ژورنال: Nature Nanotechnology
سال: 2014
ISSN: 1748-3387,1748-3395
DOI: 10.1038/nnano.2014.35